Silicon Carbide (SiC) Diodes | NDSH25170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

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Overview

EliteSiC family of Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • SMPS
  • Solar Inverter
  • UPS
  • Power Switching Circuits
  • AUX Power Supply
  • Rail Traction
  • Max Junction Temperature
  • Positive Temperature Coefficient
  • High Surge Current Capacity
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery

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NDSH25170A

Active

CAD Model

Pb

A

H

P

TO-247-2LD

NA

0

TUBE

450

Y

D1

Single

1700

35

1.75

220

40

$10.4481

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